Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

Ming Qin; Vincent M.C. Poon

doi:10.1023/A:1006729009092

Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

Ming Qin
, Vincent M.C. Poon

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si₃N₄ beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si₃N₄. It is making NiSi a good structural material for microelectromechanical systems application.

Original language	English
Pages (from-to)	2243-2245
Number of pages	3
Journal	Journal of Materials Science Letters
Volume	19
Issue number	24
DOIs	https://doi.org/10.1023/A:1006729009092
State	Published - 2000
Externally published	Yes

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title = "Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler",

abstract = "The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si3N4 beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si3N4. It is making NiSi a good structural material for microelectromechanical systems application.",

author = "Ming Qin and Poon, \{Vincent M.C.\}",

year = "2000",

doi = "10.1023/A:1006729009092",

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T1 - Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

AU - Qin, Ming

AU - Poon, Vincent M.C.

PY - 2000

Y1 - 2000

N2 - The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si3N4 beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si3N4. It is making NiSi a good structural material for microelectromechanical systems application.

AB - The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si3N4 beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si3N4. It is making NiSi a good structural material for microelectromechanical systems application.

UR - https://www.scopus.com/pages/publications/0034427924

U2 - 10.1023/A:1006729009092

DO - 10.1023/A:1006729009092

M3 - Article

AN - SCOPUS:0034427924

SN - 0261-8028

VL - 19

SP - 2243

EP - 2245

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 24

ER -

Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

Abstract

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