Young's modulus measurement of nickel silicide film on crystal silicon by a surface profiler

Ming Qin, Vincent M.C. Poon

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

The Young's modulus of NiSi film formed at 350 °C on single crystal was investigated by measuring the deflections of NiSi and Si3N4 beams using a surface profiler. The measuring method was quite simple but the precision depends on the accuracy of the Young's modulus of the reference material. The measured Young's modulus of NiSi formed at 350 °C is about 132 GPa, which is lower than that of normal grown polysilicon and Si3N4. It is making NiSi a good structural material for microelectromechanical systems application.

Original languageEnglish
Pages (from-to)2243-2245
Number of pages3
JournalJournal of Materials Science Letters
Volume19
Issue number24
DOIs
StatePublished - 2000
Externally publishedYes

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