Type of CMOS temperature sensor

Xun Zhang; Peng Wang; Dongming Jin

Type of CMOS temperature sensor

Xun Zhang, Peng Wang, Dongming Jin

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Theory and design of compatible wide range smart temperature sensors in standard CMOS technology is presented. The simulated temperature sensitivity using a CSMC 0.6μm mixed-signal CMOS process is -1.15 μA/°C (over the temperature range of -40°C-125°C) and the measured is -0.99 μA/°C. The power dissipation of the sensor is 1.5 mW at a 5 V voltage supply, and the chip area is 0.025 mm². The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, oil prospecting, biomedical, and consumer.

Original language	English
Pages (from-to)	2202-2207
Number of pages	6
Journal	Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume	26
Issue number	11
State	Published - Nov 2005
Externally published	Yes

Keywords

Integrated circuits
Temperature coefficient
Temperature sensor

Cite this

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title = "Type of CMOS temperature sensor",

abstract = "Theory and design of compatible wide range smart temperature sensors in standard CMOS technology is presented. The simulated temperature sensitivity using a CSMC 0.6μm mixed-signal CMOS process is -1.15 μA/°C (over the temperature range of -40°C-125°C) and the measured is -0.99 μA/°C. The power dissipation of the sensor is 1.5 mW at a 5 V voltage supply, and the chip area is 0.025 mm2. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, oil prospecting, biomedical, and consumer.",

keywords = "Integrated circuits, Temperature coefficient, Temperature sensor",

author = "Xun Zhang and Peng Wang and Dongming Jin",

year = "2005",

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language = "English",

volume = "26",

pages = "2202--2207",

journal = "Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors",

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TY - JOUR

T1 - Type of CMOS temperature sensor

AU - Zhang, Xun

AU - Wang, Peng

AU - Jin, Dongming

PY - 2005/11

Y1 - 2005/11

N2 - Theory and design of compatible wide range smart temperature sensors in standard CMOS technology is presented. The simulated temperature sensitivity using a CSMC 0.6μm mixed-signal CMOS process is -1.15 μA/°C (over the temperature range of -40°C-125°C) and the measured is -0.99 μA/°C. The power dissipation of the sensor is 1.5 mW at a 5 V voltage supply, and the chip area is 0.025 mm2. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, oil prospecting, biomedical, and consumer.

AB - Theory and design of compatible wide range smart temperature sensors in standard CMOS technology is presented. The simulated temperature sensitivity using a CSMC 0.6μm mixed-signal CMOS process is -1.15 μA/°C (over the temperature range of -40°C-125°C) and the measured is -0.99 μA/°C. The power dissipation of the sensor is 1.5 mW at a 5 V voltage supply, and the chip area is 0.025 mm2. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as automotive, oil prospecting, biomedical, and consumer.

KW - Integrated circuits

KW - Temperature coefficient

KW - Temperature sensor

UR - http://www.scopus.com/inward/record.url?scp=33644836263&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:33644836263

SN - 0253-4177

VL - 26

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JO - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

JF - Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

IS - 11

ER -

Type of CMOS temperature sensor

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Keywords

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