@inproceedings{f05f14c898564706bf10bad2681c8716,
title = "Thermal stability of nickel silicides in different silicon substrates",
abstract = "Thermal stability of nickel monosilicide (NiSi) on single crystalline silicon (c-Si), poly-crystalline silicon (poly-Si) and amorphous silicon (a-Si) has been investigated. NiSi is stable and can show low resistivity on c-Si and poly-Si up to around 700°C forming gas anneal (FGA), but is quite unstable on a-Si substrate even after corresponding annealing at only 400°C. However, NiSi pure gate formed on poly-Si and a-Si films are both found to be quite stable with temperature up to 1000°C FGA and on 1000 {\AA} gate oxide.",
author = "Ho, {Stephen C.H.} and Poon, {M. C.} and Mansun Chan and H. Wong",
note = "Publisher Copyright: {\textcopyright} 1998 IEEE.; 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 ; Conference date: 29-08-1998 Through 29-08-1998",
year = "1998",
doi = "10.1109/HKEDM.1998.740198",
language = "English",
series = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "105--108",
booktitle = "Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998",
address = "United States",
}