Thermal stability of nickel silicide films in submicron p-type polysilicon lines

M. C. Poon, F. Deng, H. Wong, M. Chan, J. K.O. Sin, S. S. Lau, C. H. Ho, P. G. Han

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

In this work, we found that very low resistivity NiSi can be thermally stable and is independent on linewidth for deep submicron p-type poly-Si lines up to 700-750 °C for 0.5 and 1 hr annealing, and for linewidths as narrow as 0.2-0.1 μm. It widens the thermal budget windows and process tolerance for NiSi and further suggest that NiSi is a very promising contact material candidate for future ULSI devices.

Original languageEnglish
Pages54-58
Number of pages5
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: 30 Aug 199730 Aug 1997

Conference

ConferenceProceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period30/08/9730/08/97

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