Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon; F. Deng; H. Wong; M. Wong; J. K.O. Sin; S. S. Lau; C. H. Ho; P. G. Han

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

M. C. Poon, F. Deng, H. Wong, M. Wong, J. K.O. Sin, S. S. Lau, C. H. Ho, P. G. Han

Research output: Contribution to conference › Paper › peer-review

3 Scopus citations

Abstract

CoSi₂ is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi₂ are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi₂ is a better silicide material for amorphous Si device applications.

Original language	English
Pages	65-68
Number of pages	4
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong Duration: 30 Aug 1997 → 30 Aug 1997

Conference

Conference	Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting
City	Hong Kong, Hong Kong
Period	30/08/97 → 30/08/97

Cite this

@conference{a080bba51f8a48359cd8c61f5425d06f,

title = "Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon",

abstract = "CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.",

author = "Poon, {M. C.} and F. Deng and H. Wong and M. Wong and Sin, {J. K.O.} and Lau, {S. S.} and Ho, {C. H.} and Han, {P. G.}",

year = "1997",

language = "English",

pages = "65--68",

note = "Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting ; Conference date: 30-08-1997 Through 30-08-1997",

}

TY - CONF

T1 - Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

AU - Poon, M. C.

AU - Deng, F.

AU - Wong, H.

AU - Wong, M.

AU - Sin, J. K.O.

AU - Lau, S. S.

AU - Ho, C. H.

AU - Han, P. G.

PY - 1997

Y1 - 1997

N2 - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

AB - CoSi2 is stable on amorphous Si and crystalline Si substrates and it shows low resistivity after 950 °C and 30 minutes annealing. NiSi is stable and shows low resistivity on crystalline Si after 750 °C and 30 minutes annealing, but is unstable on amorphous Si substrate even after 400 °C annealing. Both NiSi and NiSi2 are formed and mixed with the Si substrate, and the processes increase with annealing temperature. Results suggest that CoSi2 is a better silicide material for amorphous Si device applications.

UR - http://www.scopus.com/inward/record.url?scp=0031365740&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0031365740

SP - 65

EP - 68

T2 - Proceedings of the 1997 IEEE Hong Kong Electron Devices Meeting

Y2 - 30 August 1997 through 30 August 1997

ER -

Thermal stability of cobalt and nickel silicides in amorphous and crystalline silicon

Abstract

Conference

Fingerprint

Cite this