Abstract
Infrared emissivity of high quality indium tin oxide (ITO) film has been calculated based on the infrared radiation theory and thin film optical theory, the theoretical curves and the testing curves basically agree with each other. It is concluded that when the sheet resistance is less than 30Ω, the theoretical value of infrared emissivity of ITO films on the infrared wave band of 8 μm to 14 μm will be less than 0.1. Therefore, the ITO film of practical sheet resistance less than 10Ω has good infrared stealthy capability. Physical mechanism of low infrared emissivity for ITO film is discussed, and the critical sheet resistance of low infrared emissivity, which conduce to the theoretical study and the manufacture of infrared stealthy ITO film, is put forward in this paper.
| Original language | English |
|---|---|
| Pages (from-to) | 4439-4444 |
| Number of pages | 6 |
| Journal | Wuli Xuebao/Acta Physica Sinica |
| Volume | 54 |
| Issue number | 9 |
| State | Published - Sep 2005 |
| Externally published | Yes |
Keywords
- ITO film
- Infrared emissivity
- Sheet resistance
- Theoretical calculation