The rectifying property and magnetoresistance of la0.67Ca 0.33MnO3/SiO2/Si heterojunction

P. L. Lang; Y. G. Zhao; C. M. Xiong; P. Wang; J. Li; D. N. Zheng

doi:10.1063/1.2337555

The rectifying property and magnetoresistance of la_0.67Ca _0.33MnO₃/SiO₂/Si heterojunction

P. L. Lang, Y. G. Zhao, C. M. Xiong, P. Wang, J. Li, D. N. Zheng

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

We have fabricated a heterojunction by depositing La_0.67Ca _0.33MnO₃ film on electron doped silicon wafer with a buffer layer of natural SiO₂. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La _0.67Ca_0.33MnO₃ film. This work also demonstrates that SCL diode can be realized in La_0.67Ca _0.33MnO₃/SiO₂/Si with the presence of the SiO₂ layer.

Original language	English
Article number	053909
Journal	Journal of Applied Physics
Volume	100
Issue number	5
DOIs	https://doi.org/10.1063/1.2337555
State	Published - 2006
Externally published	Yes

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@article{888188415a544a7f9bbb29aebfa71bca,

title = "The rectifying property and magnetoresistance of la0.67Ca 0.33MnO3/SiO2/Si heterojunction",

abstract = "We have fabricated a heterojunction by depositing La0.67Ca 0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La 0.67Ca0.33MnO3 film. This work also demonstrates that SCL diode can be realized in La0.67Ca 0.33MnO3/SiO2/Si with the presence of the SiO2 layer.",

author = "Lang, {P. L.} and Zhao, {Y. G.} and Xiong, {C. M.} and P. Wang and J. Li and Zheng, {D. N.}",

note = "Funding Information: This work was supported by the National Science Foundation of China (Nos. 50272031, 50425205, and 50472076), the Excellent Young Teacher Program of MOE, 973 project (No. 2002CB613505), Specialized Research for the Doctoral Program of Higher Education (No. 20030003088), NationalCenter for Nanoscience and Technology of China, and China Postdoctoral Science Foundation (No. 2005038315).",

year = "2006",

doi = "10.1063/1.2337555",

language = "English",

volume = "100",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "5",

}

TY - JOUR

T1 - The rectifying property and magnetoresistance of la0.67Ca 0.33MnO3/SiO2/Si heterojunction

AU - Lang, P. L.

AU - Zhao, Y. G.

AU - Xiong, C. M.

AU - Wang, P.

AU - Li, J.

AU - Zheng, D. N.

N1 - Funding Information: This work was supported by the National Science Foundation of China (Nos. 50272031, 50425205, and 50472076), the Excellent Young Teacher Program of MOE, 973 project (No. 2002CB613505), Specialized Research for the Doctoral Program of Higher Education (No. 20030003088), NationalCenter for Nanoscience and Technology of China, and China Postdoctoral Science Foundation (No. 2005038315).

PY - 2006

Y1 - 2006

N2 - We have fabricated a heterojunction by depositing La0.67Ca 0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La 0.67Ca0.33MnO3 film. This work also demonstrates that SCL diode can be realized in La0.67Ca 0.33MnO3/SiO2/Si with the presence of the SiO2 layer.

AB - We have fabricated a heterojunction by depositing La0.67Ca 0.33MnO3 film on electron doped silicon wafer with a buffer layer of natural SiO2. The current-voltage measurement shows that it is a diode with a good rectifying property in a wide temperature range. At high positive voltages, the current-voltage curve shows space charge limited (SCL) current behavior, manifesting itself as a SCL diode. At low positive and negative voltages, the resistance of the junction shows a peak at a certain temperature, which decreases with increasing positive voltage and keeps constant at negative voltages. Magnetoresistance of the junction shows a similar temperature dependence as the resistance of the junction. Calculations show that these phenomena can be attributed to the depletion layer of the La 0.67Ca0.33MnO3 film. This work also demonstrates that SCL diode can be realized in La0.67Ca 0.33MnO3/SiO2/Si with the presence of the SiO2 layer.

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DO - 10.1063/1.2337555

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SN - 0021-8979

VL - 100

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 5

M1 - 053909

ER -

The rectifying property and magnetoresistance of la0.67Ca 0.33MnO3/SiO2/Si heterojunction

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The rectifying property and magnetoresistance of la_0.67Ca _0.33MnO₃/SiO₂/Si heterojunction