The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam

M. C. Poon; S. P. Wong; Y. W. Lam; H. L. Kwok

doi:10.1149/1.2100369

The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam

M. C. Poon, S. P. Wong, Y. W. Lam, H. L. Kwok

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Original language	English
Pages (from-to)	3190-3191
Number of pages	2
Journal	Journal of the Electrochemical Society
Volume	134
Issue number	12
DOIs	https://doi.org/10.1149/1.2100369
State	Published - Dec 1987
Externally published	Yes

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10.1149/1.2100369

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title = "The Effect of Beam Current on the Crystal Quality of the Residual Silicon Layer in Buried Nitride Structure Formed by Nitrogen Implantation with a Stationary Beam",

author = "Poon, {M. C.} and Wong, {S. P.} and Lam, {Y. W.} and Kwok, {H. L.}",

year = "1987",

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