The effect of amorphous Si thickness in metal induced lateral crystallization technology

T. C. Leung, C. F. Cheng, W. Y. Chan, M. C. Poon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

7 Scopus citations

Abstract

Metal Induced Lateral Crystallization (MILC) was carried out for amorphous Si (a-Si) with different thickness. The effect of a-Si thickness on MILC process was studied. We found that longer MILC region was obtained when a thinner a-Si layer was used. Thin-film transistors (TFT) were fabricated on the MILC poly-Si with different thickness. It was found that the TFTs on the thin MILC poly-Si layer have better performance than those on the thick MILC poly-Si layer. The results show that a thin (1000 Å) a-Si layer should be used for MILC TFT fabrication, in order to obtain better TFT performances.

Original languageEnglish
Title of host publicationIEEE Region 10 International Conference on Electrical and Electronic Technology
EditorsD. Tien, Y.C. Liang, D. Tien, Y.C. Liang
Pages388-390
Number of pages3
StatePublished - 2001
Externally publishedYes
EventIEEE Region 10 International Conference on Electrical and Electronic Technology - Singapore, Singapore
Duration: 19 Aug 200122 Aug 2001

Publication series

NameIEEE Region 10 International Conference on Electrical and Electronic Technology

Conference

ConferenceIEEE Region 10 International Conference on Electrical and Electronic Technology
Country/TerritorySingapore
CitySingapore
Period19/08/0122/08/01

Keywords

  • Silicon on insulator technology
  • Thin film

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