Temperature sensors based on CMOS sub-threshold characteristic

Xun Zhang, Peng Wang, Dongming Jin

Research output: Contribution to journalArticlepeer-review

1 Scopus citations

Abstract

The design of a compatible wide-range low-power smart temperature sensor based on the CMOS sub-threshold characteristic is presented for the purpose of on-chip temperature measure and protection from overheating. Simulated with CSMC 0.6 μm mixed-signal CMOS technology, the circuit works well over the temperature range from -50 to 150°C. For the amplifier feedback, it has a high power supply rejection ratio under VDD from 2 to 6 V. Measurements support the simulation result. The temperature sensitivity is 0.77V/°C. The power dissipation of the sensor is 16 μA because the bias current is generated by the CMOS sub-threshold characteristic. The chip area is 300 μm × 250 μm. The characteristics of this sensor make it especially suitable for low-cost high-volume integrated microsystems over a wide range of fields, such as computer, automotive, and biomedical.

Original languageEnglish
Pages (from-to)1676-1680
Number of pages5
JournalPan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors
Volume27
Issue number9
StatePublished - Sep 2006
Externally publishedYes

Keywords

  • Power supply rejection ratio
  • Temperature protecting circuit
  • Temperature sensitivity
  • Temperature sensor

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