TCAD modeling of metal induced lateral crystallization of amorphous silicon

Aleksey M. Agapov; Valeri V. Kalinin; Alexandre M. Myasnikov; Vincent M.C. Poon; Bert Vermeire

doi:10.1557/proc-862-a6.6

TCAD modeling of metal induced lateral crystallization of amorphous silicon

Aleksey M. Agapov, Valeri V. Kalinin, Alexandre M. Myasnikov, Vincent M.C. Poon, Bert Vermeire

Research output: Contribution to journal › Conference article › peer-review

Abstract

In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.

Original language	English
Article number	A6.6
Pages (from-to)	251-256
Number of pages	6
Journal	Materials Research Society Symposium Proceedings
Volume	862
DOIs	https://doi.org/10.1557/proc-862-a6.6
State	Published - 2005
Externally published	Yes
Event	2005 Materials Research Society Spring Meeting - San Francisco, CA, United States Duration: 28 Mar 2005 → 1 Apr 2005

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title = "TCAD modeling of metal induced lateral crystallization of amorphous silicon",

abstract = "In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.",

author = "Agapov, {Aleksey M.} and Kalinin, {Valeri V.} and Myasnikov, {Alexandre M.} and Poon, {Vincent M.C.} and Bert Vermeire",

year = "2005",

doi = "10.1557/proc-862-a6.6",

language = "English",

volume = "862",

pages = "251--256",

journal = "Materials Research Society Symposium Proceedings",

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publisher = "Materials Research Society",

note = "2005 Materials Research Society Spring Meeting ; Conference date: 28-03-2005 Through 01-04-2005",

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TY - JOUR

T1 - TCAD modeling of metal induced lateral crystallization of amorphous silicon

AU - Agapov, Aleksey M.

AU - Kalinin, Valeri V.

AU - Myasnikov, Alexandre M.

AU - Poon, Vincent M.C.

AU - Vermeire, Bert

PY - 2005

Y1 - 2005

N2 - In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.

AB - In our previous publications [1, 2] nickel diffusion and spreading resistance probe (SRP) measurements for quality control of metal induced lateral crystallization (MILC) of amorphous silicon (a-Si) were studied. Now we present TCAD modeling and an explanation of experimental results. By using ISE TCAD the Ni concentration distributions were calculated and compared with results obtained by experiments using SIMS analysis.

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U2 - 10.1557/proc-862-a6.6

DO - 10.1557/proc-862-a6.6

M3 - Conference article

AN - SCOPUS:30544441679

SN - 0272-9172

VL - 862

SP - 251

EP - 256

JO - Materials Research Society Symposium Proceedings

JF - Materials Research Society Symposium Proceedings

M1 - A6.6

T2 - 2005 Materials Research Society Spring Meeting

Y2 - 28 March 2005 through 1 April 2005

ER -

TCAD modeling of metal induced lateral crystallization of amorphous silicon

Abstract

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