Abstract
Nickel-Induced-Lateral-Crystallization (NILC) was carried out on a 6000 Å amorphous Si (a-Si) layer. 6000 Å NILC poly-Si was formed and the upper 5000 Å Si layer was then removed. When compared to the conventional 1000 Å NILC poly-Si, the bottom 1000 Å NILC poly-Si layer was found to have relatively larger grains, less grain boundaries and better transistor mobility. The new high quality (super) NILC poly-Si layer can potentially provide greater contributions for novel device and circuit applications.
| Original language | English |
|---|---|
| Pages (from-to) | A641-A646 |
| Journal | Materials Research Society Symposium - Proceedings |
| Volume | 664 |
| DOIs | |
| State | Published - 2001 |
| Externally published | Yes |
| Event | Amorphous and Heterogeneous Silicon Based Films 2001 - San Francisco, CA, United States Duration: 16 Apr 2001 → 20 Apr 2001 |