Study of porous silicon gas sensor

W. M. Kwok, Y. C. Bow, W. Y. Chan, M. C. Poon, P. G. Han, H. Wong

Research output: Contribution to conferencePaperpeer-review

6 Scopus citations

Abstract

Porous silicon (Si) and porous poly-Si organic and humidity vapor sensors have been studied. For aluminum (Al)/porous Si/p-Si/Al Schottky diode sensor, the sensitivity compared to air at room temperature in 2600 ppm acetone, methanol, 2-propanol and ethanol vapor are about 400, 500, 1000 and 4000% respectively. Sensitivity for 800-2600 ppm ethanol is 200 to 4000%. The sensor can be converted into an Al/porous Si/Al resistor sensor with sensitivity of about 500 times for a humidity change of 43-75%. Both sensors have response time of about 0.5 min and sensitivity is repeatable and stable with time. The porous Si sensor can be integrated into other VLSI Si devices to form novel microelectronic systems.

Original languageEnglish
Pages80-83
Number of pages4
StatePublished - 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: 26 Jun 199926 Jun 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period26/06/9926/06/99

Fingerprint

Dive into the research topics of 'Study of porous silicon gas sensor'. Together they form a unique fingerprint.

Cite this