Study of nickel silicide film as a mechanical material

Ming Qin; M. C. Poon; C. Y. Yuen

doi:10.1016/S0924-4247(00)00463-5

Study of nickel silicide film as a mechanical material

Ming Qin
, M. C. Poon
, C. Y. Yuen

Research output: Contribution to journal › Article › peer-review

34 Scopus citations

Abstract

Nickel silicide films, as a mechanical material, are investigated in detail. The film is prepared by high vacuum evaporation and rapid thermal annealing (RTA). The structure of the film is investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). It is shown that the resistivity of the film depends on the sintering temperature and keeps almost constant at the temperature from 400°C to 700°C. The stress of the film formed on c-Si is also measured, and it is found that it varies from -4.19 × 10⁸ to 6.23 × 10⁸ dyn/cm² (1 dyn/cm² = 0.1 N/m²) as the formation temperature varies from 250 to 700°C. The Young's modulus of the film is measured to be 132 GPa, which means that the film has good elasticity. Finally, low stress micron-size NiSi micro-bridges and cantilevers have been demonstrated on silicon and oxide substrates.

Original language	English
Pages (from-to)	90-95
Number of pages	6
Journal	Sensors and Actuators A: Physical
Volume	87
Issue number	1-2
DOIs	https://doi.org/10.1016/S0924-4247(00)00463-5
State	Published - 1 Dec 2000
Externally published	Yes

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title = "Study of nickel silicide film as a mechanical material",

abstract = "Nickel silicide films, as a mechanical material, are investigated in detail. The film is prepared by high vacuum evaporation and rapid thermal annealing (RTA). The structure of the film is investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). It is shown that the resistivity of the film depends on the sintering temperature and keeps almost constant at the temperature from 400°C to 700°C. The stress of the film formed on c-Si is also measured, and it is found that it varies from -4.19 × 108 to 6.23 × 108 dyn/cm2 (1 dyn/cm2 = 0.1 N/m2) as the formation temperature varies from 250 to 700°C. The Young's modulus of the film is measured to be 132 GPa, which means that the film has good elasticity. Finally, low stress micron-size NiSi micro-bridges and cantilevers have been demonstrated on silicon and oxide substrates.",

author = "Ming Qin and Poon, \{M. C.\} and Yuen, \{C. Y.\}",

note = "Funding Information: This work was supported by a Competitive Earmarked Research Grant from the Hong Kong Research Grants Council.",

year = "2000",

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doi = "10.1016/S0924-4247(00)00463-5",

language = "English",

volume = "87",

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TY - JOUR

T1 - Study of nickel silicide film as a mechanical material

AU - Qin, Ming

AU - Poon, M. C.

AU - Yuen, C. Y.

N1 - Funding Information: This work was supported by a Competitive Earmarked Research Grant from the Hong Kong Research Grants Council.

PY - 2000/12/1

Y1 - 2000/12/1

N2 - Nickel silicide films, as a mechanical material, are investigated in detail. The film is prepared by high vacuum evaporation and rapid thermal annealing (RTA). The structure of the film is investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). It is shown that the resistivity of the film depends on the sintering temperature and keeps almost constant at the temperature from 400°C to 700°C. The stress of the film formed on c-Si is also measured, and it is found that it varies from -4.19 × 108 to 6.23 × 108 dyn/cm2 (1 dyn/cm2 = 0.1 N/m2) as the formation temperature varies from 250 to 700°C. The Young's modulus of the film is measured to be 132 GPa, which means that the film has good elasticity. Finally, low stress micron-size NiSi micro-bridges and cantilevers have been demonstrated on silicon and oxide substrates.

AB - Nickel silicide films, as a mechanical material, are investigated in detail. The film is prepared by high vacuum evaporation and rapid thermal annealing (RTA). The structure of the film is investigated by X-ray photoelectron spectroscopy (XPS) and atomic force microscope (AFM). It is shown that the resistivity of the film depends on the sintering temperature and keeps almost constant at the temperature from 400°C to 700°C. The stress of the film formed on c-Si is also measured, and it is found that it varies from -4.19 × 108 to 6.23 × 108 dyn/cm2 (1 dyn/cm2 = 0.1 N/m2) as the formation temperature varies from 250 to 700°C. The Young's modulus of the film is measured to be 132 GPa, which means that the film has good elasticity. Finally, low stress micron-size NiSi micro-bridges and cantilevers have been demonstrated on silicon and oxide substrates.

UR - https://www.scopus.com/pages/publications/0034500739

U2 - 10.1016/S0924-4247(00)00463-5

DO - 10.1016/S0924-4247(00)00463-5

M3 - Article

AN - SCOPUS:0034500739

SN - 0924-4247

VL - 87

SP - 90

EP - 95

JO - Sensors and Actuators A: Physical

JF - Sensors and Actuators A: Physical

IS - 1-2

ER -

Study of nickel silicide film as a mechanical material

Abstract

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