Structure and thermal stability of Ni/Si1-xGex contacts for VLSI applications

Ming Qin, V. M.C. Poon, C. Y. Yuen

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


The sheet resistance of Si1-xGex film was measured by the use of four-point probe method. It was found to remain stable at 350-600 °C. X Ray photoelectron spectroscopy suggests that the phase of the contact formed at 450 °C is Ni2(Si1-xGex) or a mixture of Ni2Si and Ni2Ge. A lowest resistivity value of 16.7 μΩ-cm was found at a sintering temperature of 400 °C. At a sintering temperature less than 350 °C a higher resistivity was obtained and it was affected by the amount of Ge.

Original languageEnglish
Pages (from-to)1819-1821
Number of pages3
JournalElectronics Letters
Issue number21
StatePublished - 12 Oct 2000
Externally publishedYes


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