Stressing effects on the charge trapping of silicon oxynitride prepared by thermal oxidation of LPCVD Si-rich silicon nitride

Engineering & Materials Science

• Charge trapping 100%
• Silicon nitride 77%
• Nitrogen 58%
• Oxidation 56%
• Silicon 50%
• Atoms 33%
• Hot Temperature 30%
• Interface states 16%
• Dielectric films 15%
• Phase interfaces 15%
• Capacitance measurement 15%
• Gate dielectrics 15%
• Thermooxidation 14%
• Phase separation 13%
• Voltage measurement 13%
• X ray photoelectron spectroscopy 12%
• Electrons 10%
• Permittivity 10%
• Oxygen 8%
• Temperature 8%
• Hydrogen 8%

Chemical Compounds

• Nitride 61%
• Interface Trap 52%
• Trap Density Measurement 48%
• Nitrogen 38%
• Oxidation Reaction 28%
• Nitrogen Atom 26%
• Interface State 24%
• Dielectric Film 23%
• Thermooxidation 19%
• Phase Interface 18%
• Dielectric Constant 14%
• Phase Separation 13%
• Oxygen Atom 12%
• X-Ray Photoelectron Spectroscopy 11%
• Electron Particle 8%
• Hydrogen 8%
• Energy 7%
• Reduction 7%
• Mixture 6%
• Amount 6%

Physics & Astronomy

• oxynitrides 75%
• silicon nitrides 62%
• trapping 49%
• oxidation 46%
• silicon 34%
• nitrogen 23%
• nitrogen atoms 18%
• traps 17%
• oxygen atoms 8%
• high energy electrons 7%
• electrical measurement 7%
• temperature 7%
• photoelectron spectroscopy 6%
• capacitance 6%
• permittivity 5%
• hydrogen 4%
• shift 4%
• atoms 4%
• x rays 3%