@article{7802fcbdec074f2a84e9ea2ac4ef5a06,
title = "Stability of NiSi in boron-doped polysilicon lines",
abstract = "We have found that very low resistivity NiSi can be thermally stable and independent of linewidth in borondoped and in-situ boron-doped deep submicron poly-Si lines up to 650-750°C for 0.5 and 1 h annealing, and for linewidths as narrow as 0.2-0.1 μm. It widens the process tolerance and thermal budget windows for NiSi, and suggests that NiSi is a very promising contact material candidate for future ultra-large-scale-integration devices.",
author = "Poon, {M. C.} and M. Chan and Zhang, {W. Q.} and F. Deng and Lau, {S. S.}",
note = "Funding Information: This work was sponsored by the research grant (grant number HKUST 564/94E) of the Research Grant Council of Hong Kong. The work performed at UCSD was sponsored by the US National Science Foundation. The authors would like to thank J. K. O. Sin of the Hong Kong University of Science and Technology, H. Wong of the City University of Hong Kong, and D. J. Qiao of the University of California of San Diego, for their technical help and valuable discussions.",
year = "1998",
doi = "10.1016/S0026-2714(98)00046-8",
language = "English",
volume = "38",
pages = "1499--1502",
journal = "Microelectronics Reliability",
issn = "0026-2714",
publisher = "Elsevier Ltd.",
number = "9",
}