Abstract
Silicon nanowires were prepared by a thermal evaporation of MoSi 2 heating rods under controlled temperature and atmosphere. Transmission electron microscopy and selected area electron diffraction show that the nanowire consists of a crystalline Si core and an amorphous SiO x shell. There exist two major forms of nanowires possessing different morphologies and growth directions, which may indicate that different mechanisms predominate in the growth process. The photoluminescence of the Si/SiOx core-shell nanowires presents two emission bands, around 550 and 600 nm, respectively.
Original language | English |
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Pages (from-to) | 368-373 |
Number of pages | 6 |
Journal | Chemical Physics Letters |
Volume | 378 |
Issue number | 3-4 |
DOIs | |
State | Published - 5 Sep 2003 |
Externally published | Yes |