SOI formation from amorphous silicon by novel grain enhancement method

C. Y. Yuen, M. C. Poon, M. Chan, M. Qin, W. Y. Chan, S. Shivani, P. K. Ko

Research output: Contribution to journalArticlepeer-review

Abstract

Large grain (> 10 um) poly-Si film has been formed from nickel Metal Induced Lateral Crystallization (MILC) and subsequent high temperature annealing. The fabricated thin film transistors (TFT) have near SOI performance. The new technology has good potential to provide low cost SOI substrates, multilayer devices and other novel applications.

Original languageEnglish
Pages (from-to)08.2.1-08.2.5
JournalMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000
Externally publishedYes

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