Abstract
Large grain (>10 um) poly-Si film has been formed from nickel Metal Induced Lateral Crystallization (MILC) and subsequent high temperature annealing. The fabricated thin film transistors (TFT) have near SOI performance. The new technology has good potential to provide low cost SOI substrates, multi-layer devices and other novel applications.
Original language | English |
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Pages (from-to) | O8.2.1-O8.2.5 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 587 |
State | Published - 2000 |
Externally published | Yes |
Event | Substrate Engineering Paving the Way to Epitaxy - Boston, MA, USA Duration: 29 Nov 1999 → 3 Dec 1999 |