SOI formation from amorphous silicon by novel grain enhancement method

C. Y. Yuen, M. C. Poon, M. Chan, M. Qin, W. Y. Chan, S. Shivani, P. K. Ko

Research output: Contribution to journalConference articlepeer-review

Abstract

Large grain (>10 um) poly-Si film has been formed from nickel Metal Induced Lateral Crystallization (MILC) and subsequent high temperature annealing. The fabricated thin film transistors (TFT) have near SOI performance. The new technology has good potential to provide low cost SOI substrates, multi-layer devices and other novel applications.

Original languageEnglish
Pages (from-to)O8.2.1-O8.2.5
JournalMaterials Research Society Symposium - Proceedings
Volume587
StatePublished - 2000
Externally publishedYes
EventSubstrate Engineering Paving the Way to Epitaxy - Boston, MA, USA
Duration: 29 Nov 19993 Dec 1999

Fingerprint

Dive into the research topics of 'SOI formation from amorphous silicon by novel grain enhancement method'. Together they form a unique fingerprint.

Cite this