SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing

Singh Jagar; Mansun Chan; M. C. Poon; Hongmei Wang; Ming Qin; Singla Shivani; Ping K. Ko; Yangyuan Wang

SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing

Singh Jagar, Mansun Chan, M. C. Poon, Hongmei Wang, Ming Qin, Singla Shivani, Ping K. Ko, Yangyuan Wang

Research output: Contribution to conference › Paper › peer-review

4 Scopus citations

Abstract

Polysilicon with large grain size of the order of several ten's of micron were obtained by combining metal induced lateral crystallization (MILC) on amorphous silicon and high temperature treatment. An alternative method for silicon on insulator (SOI) formation is proposed using the same method and individually crystallize the active region of the thin film transistors. The transistors formed on the large enhanced grains has current-voltage characteristics close to transistor fabricated on SIMOX wafer.

Original language	English
Pages	112-113
Number of pages	2
State	Published - 1999
Externally published	Yes
Event	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference - Rohnert Park, CA, USA Duration: 4 Oct 1999 → 7 Oct 1999

Conference

Conference	The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference
City	Rohnert Park, CA, USA
Period	4/10/99 → 7/10/99

Cite this

@conference{59af2b34f3174f9fbb1046812617f5a4,

title = "SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing",

abstract = "Polysilicon with large grain size of the order of several ten's of micron were obtained by combining metal induced lateral crystallization (MILC) on amorphous silicon and high temperature treatment. An alternative method for silicon on insulator (SOI) formation is proposed using the same method and individually crystallize the active region of the thin film transistors. The transistors formed on the large enhanced grains has current-voltage characteristics close to transistor fabricated on SIMOX wafer.",

author = "Singh Jagar and Mansun Chan and Poon, {M. C.} and Hongmei Wang and Ming Qin and Singla Shivani and Ko, {Ping K.} and Yangyuan Wang",

year = "1999",

language = "English",

pages = "112--113",

note = "The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference ; Conference date: 04-10-1999 Through 07-10-1999",

}

SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing. / Jagar, Singh; Chan, Mansun; Poon, M. C. et al.
1999. 112-113 Paper presented at The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference, Rohnert Park, CA, USA.

Research output: Contribution to conference › Paper › peer-review

TY - CONF

T1 - SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing

AU - Jagar, Singh

AU - Chan, Mansun

AU - Poon, M. C.

AU - Wang, Hongmei

AU - Qin, Ming

AU - Shivani, Singla

AU - Ko, Ping K.

AU - Wang, Yangyuan

PY - 1999

Y1 - 1999

N2 - Polysilicon with large grain size of the order of several ten's of micron were obtained by combining metal induced lateral crystallization (MILC) on amorphous silicon and high temperature treatment. An alternative method for silicon on insulator (SOI) formation is proposed using the same method and individually crystallize the active region of the thin film transistors. The transistors formed on the large enhanced grains has current-voltage characteristics close to transistor fabricated on SIMOX wafer.

AB - Polysilicon with large grain size of the order of several ten's of micron were obtained by combining metal induced lateral crystallization (MILC) on amorphous silicon and high temperature treatment. An alternative method for silicon on insulator (SOI) formation is proposed using the same method and individually crystallize the active region of the thin film transistors. The transistors formed on the large enhanced grains has current-voltage characteristics close to transistor fabricated on SIMOX wafer.

UR - http://www.scopus.com/inward/record.url?scp=0033343175&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033343175

SP - 112

EP - 113

T2 - The 25th Annual IEEE International Silicon-on-Insualtor (SOI) Conference

Y2 - 4 October 1999 through 7 October 1999

ER -

SOI formation from amorphous silicon by metal-induced-lateral-crystallization (MILC) and subsequent high temperature annealing

Abstract

Conference

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