Abstract
Single layer electroluminescent (EL) devices based on soluble p-type polymer PDDOPV doped by n-type soluble polymer PPQ are successfully fabricated. Comparing with single layer devices of pure PPDOPV, the turn-on voltage of doped single layer devices is drop from 4.5 v to 2.6 V at the same applied voltage, the current is higher but still at the same order of magnitude, and the brightness and luminescent efficiency are both enhanced more than one order of magnitude. At 10 V, the current, brightness and luminescent efficiency of devices of blends are 1.95, 30.9 and 16.0 times of those of devices of pure PPDOPV respectively. The remarkable enhancement of doped devices is attributed to the reduction of injection barrier of minority carrier and enhancement of minority carrier injection caused by the doping PPQ in PDDOPV. This result demonstrates that it is an effective way to improve the device performance by doping n-type polymer in p-type polymer.
| Original language | English |
|---|---|
| Pages (from-to) | 567-570 |
| Number of pages | 4 |
| Journal | Guangdianzi Jiguang/Journal of Optoelectronics Laser |
| Volume | 13 |
| Issue number | 6 |
| State | Published - Jun 2002 |
| Externally published | Yes |
Keywords
- Doping
- Electroluminescence (EL)
- Polymer
- Single layer device
- Thin film