Abstract
Metal-Induced-Lateral-Crystallization (MILC) followed by high temperature annealing has been used for the first time to form large single grain silicon from amorphous silicon. Polysilicon with grain size ranging from ten to hundred of microns can be formed by this method. By individually crystallizing the active area of a TFT, the entire transistor can be formed on a single or a small number of silicon grains with good controllability, thus similar to SOI structure. Test devices with thin tox=120angstrom have been fabricated and the performance is verified to be comparable to SOI MOSFETs. The scaling property of the grain enhanced TFTs has also been studied. The minimization of the device dimension results in the smaller probability for the channel region of a TFT to cover multiple grains, which leads to better device performance.
| Original language | English |
|---|---|
| Pages (from-to) | 293-296 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 1999 |
| Externally published | Yes |
| Event | 1999 IEEE International Devices Meeting (IEDM) - Washington, DC, USA Duration: 5 Dec 1999 → 8 Dec 1999 |