TY - JOUR
T1 - Simulation of pulse width impact on cavity mold(I) surface modified by plasma ion implantation
AU - Wang, Zhijian
AU - Tian, Xiubo
AU - Wang, Peng
AU - Gong, Chunzhi
AU - Yang, Shiqin
AU - Fu, Ricky
PY - 2010/12
Y1 - 2010/12
N2 - The impact of the plasma pulse width on various parameters of interest, including the potential distribution in the plasma sheath, ion motions and dosage, sputtering energy and incident angle, in the surface modification by plasma ion implantation of cavity mold of metal dies was numerically simulated with the two-dimensional particle-in-cell/Monte Carlo collision model. The simulated results show that the pulse width significantly affects the quality of ion implantation. As the width increases, the implantation dosage becomes decreasingly less uniform with increasing number of high energy ions. However, the width little affects the incident angle of the impinging ions. The pulse width can be optimized by compromising the ion energy and dosage, because large pulse width spoils uniformity of the ion beam, and decreases energies of the impinging ions.
AB - The impact of the plasma pulse width on various parameters of interest, including the potential distribution in the plasma sheath, ion motions and dosage, sputtering energy and incident angle, in the surface modification by plasma ion implantation of cavity mold of metal dies was numerically simulated with the two-dimensional particle-in-cell/Monte Carlo collision model. The simulated results show that the pulse width significantly affects the quality of ion implantation. As the width increases, the implantation dosage becomes decreasingly less uniform with increasing number of high energy ions. However, the width little affects the incident angle of the impinging ions. The pulse width can be optimized by compromising the ion energy and dosage, because large pulse width spoils uniformity of the ion beam, and decreases energies of the impinging ions.
KW - Dose uniformity
KW - Incident energy
KW - Particle-in-cell/Monte Carlo
KW - Plasma ion implantation
KW - Pulse duration
UR - http://www.scopus.com/inward/record.url?scp=78650559888&partnerID=8YFLogxK
U2 - 10.3969/j.issn.1672-7126.2010.06.05
DO - 10.3969/j.issn.1672-7126.2010.06.05
M3 - Article
AN - SCOPUS:78650559888
SN - 0253-9748
VL - 30
SP - 593
EP - 598
JO - Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology
JF - Zhenkong Kexue yu Jishu Xuebao/Journal of Vacuum Science and Technology
IS - 6
ER -