Simulation of hot-carrier reliability in MOS integrated circuits

Keyphrases

• Hot Electrons 100%
• Hot Carrier Reliability 100%
• MOS Integrated Circuits 100%
• Spices 50%
• Length-dependent 50%
• Gate Oxide 50%
• Induced Degradation 50%
• Revised Model 50%
• Channel Length 50%
• Electron Induced 50%
• Trap Model 50%
• Bias Dependence 50%
• Channel Bias 50%
• Thermionic Emission Model 50%
• Hot Electron Injection 50%
• Impact Ionization 50%
• Ionization Region 50%
• Substrate Current 50%

Engineering

• Integrated Circuit 100%
• Hot Electron 100%
• Experimental Result 33%
• Simulation Result 33%
• Good Correlation 33%
• Gate Oxide 33%
• Electron Injection 33%
• SPICE 33%
• Channel Length 33%
• Induced Degradation 33%
• Impact Ionization 33%