Abstract
A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits.
| Original language | English |
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| Pages | 625-628 |
| Number of pages | 4 |
| State | Published - 1997 |
| Externally published | Yes |
| Event | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) - Nis, Yugosl Duration: 14 Sep 1997 → 17 Sep 1997 |
Conference
| Conference | Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) |
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| City | Nis, Yugosl |
| Period | 14/09/97 → 17/09/97 |