A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits.
|Number of pages||4|
|State||Published - 1997|
|Event||Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) - Nis, Yugosl|
Duration: 14 Sep 1997 → 17 Sep 1997
|Conference||Proceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2)|
|Period||14/09/97 → 17/09/97|