Simulation of hot-carrier reliability in MOS integrated circuits

H. Wong, M. C. Poon

Research output: Contribution to conferencePaperpeer-review

3 Scopus citations

Abstract

A software package interfacing to SPICE is developed based on several new or revised models for hot electron studies. For substrate current generation, we present a new model for the characterizing the width of impact ionization region which is channel length and bias dependent. For modeling the hot electron injection into the gate oxide, a revised thermionic emission model is developed. For hot electron induced degradation, previously developed generation-trapping models are used. Good correlations with the experimental and simulation results are obtained. The program can be used to analyze the reliability and the biasing stability of MOS circuits.

Original languageEnglish
Pages625-628
Number of pages4
StatePublished - 1997
Externally publishedYes
EventProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2) - Nis, Yugosl
Duration: 14 Sep 199717 Sep 1997

Conference

ConferenceProceedings of the 1997 21st International Conference on Microelectronics, MIEL'97. Part 2 (of 2)
CityNis, Yugosl
Period14/09/9717/09/97

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