Simulated gate current characteristics of the race-track-shaped field emitter structures

Baoping Wang; Johnny K.O. Sin; M. C. Poon; Chen Wang; Yongming Tang

Simulated gate current characteristics of the race-track-shaped field emitter structures

Baoping Wang, Johnny K.O. Sin, M. C. Poon, Chen Wang, Yongming Tang

Research output: Contribution to conference › Paper › peer-review

Abstract

In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure.

Original language	English
Pages	141-144
Number of pages	4
State	Published - 1997
Externally published	Yes
Event	Proceedings of the 1997 4th Asian Symposium on Information Display - Hong Kong, Hong Kong Duration: 13 Feb 1997 → 14 Feb 1997

Conference

Conference	Proceedings of the 1997 4th Asian Symposium on Information Display
City	Hong Kong, Hong Kong
Period	13/02/97 → 14/02/97

Cite this

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title = "Simulated gate current characteristics of the race-track-shaped field emitter structures",

abstract = "In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure.",

author = "Baoping Wang and Sin, {Johnny K.O.} and Poon, {M. C.} and Chen Wang and Yongming Tang",

year = "1997",

language = "English",

pages = "141--144",

note = "Proceedings of the 1997 4th Asian Symposium on Information Display ; Conference date: 13-02-1997 Through 14-02-1997",

}

TY - CONF

T1 - Simulated gate current characteristics of the race-track-shaped field emitter structures

AU - Wang, Baoping

AU - Sin, Johnny K.O.

AU - Poon, M. C.

AU - Wang, Chen

AU - Tang, Yongming

PY - 1997

Y1 - 1997

N2 - In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure.

AB - In this paper, gate current characteristics of the single- and double-gate race-track-shaped field emitter structures are reported. The gate current characteristics are calculated by the finite-difference method in Non-Orthogonal Curvilinear Coordinate System and the fourth-order Runge-Kutta method. Numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% and the ratio of anode current to gate current is increased by 36 times at a gate voltage of 350 V compared to the single-gate structure.

UR - http://www.scopus.com/inward/record.url?scp=0030677088&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0030677088

SP - 141

EP - 144

T2 - Proceedings of the 1997 4th Asian Symposium on Information Display

Y2 - 13 February 1997 through 14 February 1997

ER -

Simulated gate current characteristics of the race-track-shaped field emitter structures

Abstract

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