SIMS study of silicon oxynitride prepared by oxidation of silicon-rich silicon nitride layer

M. C. Poon, Y. Gao, T. C.W. Kok, A. M. Myasnikov, H. Wong

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

We proposed a novel process for fabrication silicon oxide-oxynitride-oxide structure for ULSI device applications. By deposition of silicon-rich silicon nitride and then following a thermal oxidation process, a good oxynitride layer was obtained. Secondary ion mass spectroscopy (SIMS) study reveals that the hydrogen content of nitride film at the interface can be reduced by more than 40% when compared to stoichiometric nitride. With this method, high nitrogen content oxynitride and smoother oxynitride/oxide interfaces result in the reduction of the interface charge trapping remarkably.

Original languageEnglish
Pages (from-to)2071-2074
Number of pages4
JournalMicroelectronics Reliability
Volume41
Issue number12
DOIs
StatePublished - Dec 2001
Externally publishedYes

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