SIMNI SOI formed by high intensity nitrogen implantation

SIMOX (Separation by IMplanted OXide) is presently one of the most prominent materials for silicon-on-insulator (SOI) technologies and there are already many commercial manufacturers and products. Compared to SIMOX, the SIMNI (Separation by IMplanted NItride) technology has several advantages such as a lower stoichiometric dose for insulator formation and a safer and more economical implantation process [1-5]. Study of SIMNI can also provide informations to other new applications of nitrogen implantation into silicon (Si) such as etch-stop layer [2]. Recently, implanting nitrogen at high intensity (high beam current densities and wafer temperature) [3-5] has been found to greatly improve the over-stoichiometric nitride and the crystalline quality of the Si overlayer. In this article we present more preparation and characterization results of the SIMNI SOI formed by this new technique.