Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance

P. F. Wang; Zh H. Li; Y. M. Zhu

doi:10.1016/j.matchemphys.2010.05.050

Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance

P. F. Wang, Zh H. Li, Y. M. Zhu

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 °C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV-VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.

Original language	English
Pages (from-to)	356-359
Number of pages	4
Journal	Materials Chemistry and Physics
Volume	123
Issue number	2-3
DOIs	https://doi.org/10.1016/j.matchemphys.2010.05.050
State	Published - 1 Oct 2010
Externally published	Yes

Keywords

Ceramics
Luminescence
Sintering
Visible and ultraviolet spectrometers

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10.1016/j.matchemphys.2010.05.050

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title = "Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance",

abstract = "Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 °C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV-VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.",

keywords = "Ceramics, Luminescence, Sintering, Visible and ultraviolet spectrometers",

author = "Wang, {P. F.} and Li, {Zh H.} and Zhu, {Y. M.}",

year = "2010",

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doi = "10.1016/j.matchemphys.2010.05.050",

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journal = "Materials Chemistry and Physics",

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TY - JOUR

T1 - Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance

AU - Wang, P. F.

AU - Li, Zh H.

AU - Zhu, Y. M.

PY - 2010/10/1

Y1 - 2010/10/1

N2 - Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 °C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV-VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.

AB - Cubic boron nitride (cBN) micro-powders mixed with 1 wt% silicon were sintered at 1450 °C under a pressure of 5.0 GPa. The grain boundaries and silicon distribution in Si-cBN ceramics were studied by scanning electronic microscope (SEM) and energy-dispersive spectrometer (EDS). Optical properties of the ceramics were investigated by UV-VIS diffuse reflectance and photoluminescence spectra at room temperature. Some important parameters of studied ceramics such as absorption coefficient and defect levels were identified from reflection spectra by intercept method. The experimental results indicated the direct n-doped effect of silicon on cubic boron nitride ceramics. With a direct forbidden transition characteristic, the donor energy level of Si in forbidden zone of cBN ceramics was found to be 2.82 eV. The phonon energy related to the direct forbidden transition was 0.235 eV.

KW - Ceramics

KW - Luminescence

KW - Sintering

KW - Visible and ultraviolet spectrometers

UR - http://www.scopus.com/inward/record.url?scp=77955329814&partnerID=8YFLogxK

U2 - 10.1016/j.matchemphys.2010.05.050

DO - 10.1016/j.matchemphys.2010.05.050

M3 - Article

AN - SCOPUS:77955329814

SN - 0254-0584

VL - 123

SP - 356

EP - 359

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

IS - 2-3

ER -

Research on the direct doping effect of silicon on cubic boron nitride ceramics by UV-VIS diffuse reflectance

Abstract

Keywords

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