Process windows of titanium, cobalt and nickel silicide in deep submicron poly-Si lines

M. C. Poon, F. Deng, C. H. Ho, M. Chan, S. S. Lau

Research output: Contribution to journalConference articlepeer-review

Abstract

Low resistivity (approx. 15 μΩ-cm) TiSi2, CoSi2 and NiSi lines have been shown to be thermally stable and show no linewidth dependence after approx. 850°C, 800°C and 700°C/1 hour annealing on poly-Si (B, As, and P-doped) with linewidths down to approx. 0.43, 0.42 and 0.15 μm. Better thermal stability of silicides might be correlated to the larger poly grains formed after high dose implant and post-implant anneal.

Original languageEnglish
Pages (from-to)411-415
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume514
DOIs
StatePublished - 1998
Externally publishedYes
EventProceedings of the 1998 MRS Spring Symposium - San Francisco, CA, USA
Duration: 13 Apr 199816 Apr 1998

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