Preparation of Ge1-xCx thin film and its infrared properties

Xiao Wen Wu; Wei Jia Zhang; Li Zhi Zhong; Hao Huang

Preparation of Ge_1-xC_x thin film and its infrared properties

Xiao Wen Wu
, Wei Jia Zhang
, Li Zhi Zhong
, Hao Huang

Research output: Contribution to journal › Article › peer-review

Abstract

Ge_1-xC_x films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition). The effects of processing parameters on carbon content and infrared optical properties of the films were studied. The results showed that carbon content in the films increased with the increased of gas flow radio CH₄/GeH₄. The infrared refractive index was various from 2 to 4. The deposition rate was increased with the increase of ratio frequency power, but it was almost invariable when the power was higher than 60W. The deposition rate was decreased with increased of the temperature. Ge_1-xC_x films were transparent in the band of long infrared wavelength.

Original language	English
Pages (from-to)	53-57
Number of pages	5
Journal	Cailiao Gongcheng/Journal of Materials Engineering
Issue number	1
State	Published - Jan 2005
Externally published	Yes

Keywords

Deposition rate
GeC thin film
Infrared property
PECVD

Cite this

@article{b15e2e812f2b4449821f28e9c049c18f,

title = "Preparation of Ge1-xCx thin film and its infrared properties",

abstract = "Ge1-xCx films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition). The effects of processing parameters on carbon content and infrared optical properties of the films were studied. The results showed that carbon content in the films increased with the increased of gas flow radio CH4/GeH4. The infrared refractive index was various from 2 to 4. The deposition rate was increased with the increase of ratio frequency power, but it was almost invariable when the power was higher than 60W. The deposition rate was decreased with increased of the temperature. Ge1-xCx films were transparent in the band of long infrared wavelength.",

keywords = "Deposition rate, GeC thin film, Infrared property, PECVD",

author = "Wu, \{Xiao Wen\} and Zhang, \{Wei Jia\} and Zhong, \{Li Zhi\} and Hao Huang",

year = "2005",

month = jan,

language = "English",

pages = "53--57",

journal = "Cailiao Gongcheng/Journal of Materials Engineering",

issn = "1001-4381",

publisher = "Science Press",

number = "1",

}

TY - JOUR

T1 - Preparation of Ge1-xCx thin film and its infrared properties

AU - Wu, Xiao Wen

AU - Zhang, Wei Jia

AU - Zhong, Li Zhi

AU - Huang, Hao

PY - 2005/1

Y1 - 2005/1

N2 - Ge1-xCx films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition). The effects of processing parameters on carbon content and infrared optical properties of the films were studied. The results showed that carbon content in the films increased with the increased of gas flow radio CH4/GeH4. The infrared refractive index was various from 2 to 4. The deposition rate was increased with the increase of ratio frequency power, but it was almost invariable when the power was higher than 60W. The deposition rate was decreased with increased of the temperature. Ge1-xCx films were transparent in the band of long infrared wavelength.

AB - Ge1-xCx films were prepared by PECVD (Plasma Enhanced Chemical Vapor Deposition). The effects of processing parameters on carbon content and infrared optical properties of the films were studied. The results showed that carbon content in the films increased with the increased of gas flow radio CH4/GeH4. The infrared refractive index was various from 2 to 4. The deposition rate was increased with the increase of ratio frequency power, but it was almost invariable when the power was higher than 60W. The deposition rate was decreased with increased of the temperature. Ge1-xCx films were transparent in the band of long infrared wavelength.

KW - Deposition rate

KW - GeC thin film

KW - Infrared property

KW - PECVD

UR - https://www.scopus.com/pages/publications/13944267545

M3 - Article

AN - SCOPUS:13944267545

SN - 1001-4381

SP - 53

EP - 57

JO - Cailiao Gongcheng/Journal of Materials Engineering

JF - Cailiao Gongcheng/Journal of Materials Engineering

IS - 1

ER -

Preparation of Ge1-xCx thin film and its infrared properties

Abstract

Keywords

Fingerprint

Cite this

Preparation of Ge_1-xC_x thin film and its infrared properties