Poly silicon film formation by nickel-induced-lateral-crystallization and pulsed rapid thermal annealing

T. C. Leung, C. F. Cheng, M. C. Poon

Research output: Contribution to conferencePaperpeer-review

5 Scopus citations

Abstract

Pulsed Rapid Thermal Annealing (PRTA) is applied on poly silicon formation, Nickel Induced Lateral Crystallization (NILC). It can reduce the annealing time form tens of hours to several minutes. The growth rate increases greatly from 0.025μm/minute to 2.5μm/minute. The performance of the thin film transistor formed by PRTA is similar to conventional constant temperature annealing (CTA). The new method is highly recommended for poly-Si formation in fast throughput and low cost device application.

Original languageEnglish
Pages93-96
Number of pages4
StatePublished - 2001
Externally publishedYes
Event2001 IEEE Hong Kong Electron Devices Meeting - Hong Kong, China
Duration: 30 Jun 2001 → …

Conference

Conference2001 IEEE Hong Kong Electron Devices Meeting
Country/TerritoryChina
CityHong Kong
Period30/06/01 → …

Keywords

  • CTA
  • Growth rate
  • NILC
  • PRTA

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