Physical structure of light-emitting porous polycrystalline silicon thin films

P. G. Han; H. Wong; M. C. Poon

doi:10.1016/S0026-2714(99)00021-9

Physical structure of light-emitting porous polycrystalline silicon thin films

P. G. Han, H. Wong, M. C. Poon

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si³⁺ or Si²⁺) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission.

Original language	English
Pages (from-to)	457-462
Number of pages	6
Journal	Microelectronics Reliability
Volume	39
Issue number	4
DOIs	https://doi.org/10.1016/S0026-2714(99)00021-9
State	Published - Apr 1999
Externally published	Yes

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@article{07e8f0b8cec74903998da12131ca9450,

title = "Physical structure of light-emitting porous polycrystalline silicon thin films",

abstract = "This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission.",

author = "Han, {P. G.} and H. Wong and Poon, {M. C.}",

note = "Funding Information: The authors would like to thank Wing Leong Chung in the Microelectronic Fabrication Centre of the Hong Kong University of Science & Technology, for help in the preparation of polycrystalline Si thin films, and Terry L Smith in Materials Characterization & Preparation Center of the Hong Kong University of Science & Technology for his assistance in XPS analysis. This work was partially supported by RGC Grant No. HKUST 111/92E of Hong Kong.",

year = "1999",

month = apr,

doi = "10.1016/S0026-2714(99)00021-9",

language = "English",

volume = "39",

pages = "457--462",

journal = "Microelectronics Reliability",

issn = "0026-2714",

publisher = "Elsevier Ltd.",

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TY - JOUR

T1 - Physical structure of light-emitting porous polycrystalline silicon thin films

AU - Han, P. G.

AU - Wong, H.

AU - Poon, M. C.

N1 - Funding Information: The authors would like to thank Wing Leong Chung in the Microelectronic Fabrication Centre of the Hong Kong University of Science & Technology, for help in the preparation of polycrystalline Si thin films, and Terry L Smith in Materials Characterization & Preparation Center of the Hong Kong University of Science & Technology for his assistance in XPS analysis. This work was partially supported by RGC Grant No. HKUST 111/92E of Hong Kong.

PY - 1999/4

Y1 - 1999/4

N2 - This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission.

AB - This paper reports the surface electronic structure of light-emitting porous polycrystalline silicon (PPS) using X-ray photoelectron spectroscopy (XPS). We find that the PPS films with strong photoluminescence (PL) effect can only be observed in thin film with trace amount of silicon nanoclusters and the luminescence can be enhanced remarkably with proper passivation of the PPS surface. Incomplete oxidation of silicon (Si3+ or Si2+) does not lead to visible PL. We further estimate that the average size of silicon nanoclusters is in the range of 20-30 angstroms in the sample having PL emission.

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U2 - 10.1016/S0026-2714(99)00021-9

DO - 10.1016/S0026-2714(99)00021-9

M3 - Article

AN - SCOPUS:0032657484

SN - 0026-2714

VL - 39

SP - 457

EP - 462

JO - Microelectronics Reliability

JF - Microelectronics Reliability

IS - 4

ER -

Physical structure of light-emitting porous polycrystalline silicon thin films

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