Photoluminescent porous polycrystalline silicon

P. G. Han, M. C. Poon, K. O. Sin, M. Wong

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations

Abstract

The effect of etching conditions and x-ray diffraction (XRD) peaks to photoluminescence (PL) emissions of porous poly-Si (PPS) films has been studied. This paper discusses the results obtained. It also proposes possible explanations and models, including preliminary studies on the PPS formation kinetics.

Original languageEnglish
Pages2-5
Number of pages4
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: 1 Jul 19951 Jul 1995

Conference

ConferenceProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong
Period1/07/951/07/95

Fingerprint

Dive into the research topics of 'Photoluminescent porous polycrystalline silicon'. Together they form a unique fingerprint.

Cite this