Photoluminescent porous polycrystalline silicon

P. G. Han, M. C. Poon, K. O. Sin, M. Wong

Research output: Contribution to conferencePaperpeer-review

2 Scopus citations


The effect of etching conditions and x-ray diffraction (XRD) peaks to photoluminescence (PL) emissions of porous poly-Si (PPS) films has been studied. This paper discusses the results obtained. It also proposes possible explanations and models, including preliminary studies on the PPS formation kinetics.

Original languageEnglish
Number of pages4
StatePublished - 1995
Externally publishedYes
EventProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting - Hong Kong, Hong Kong
Duration: 1 Jul 19951 Jul 1995


ConferenceProceedings of the 1995 IEEE Hong Kong Electron Devices Meeting
CityHong Kong, Hong Kong


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