Optimization of doping concentration for three-dimensional bulk silicon microrefrigerators

Yan Zhang, Gehong Zeng, Ali Shakouri, Peng Wang, Bao Yang, Avram Bar-Cohen

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We designed and fabricated a three-dimensional (3D) silicon microrefrigerator, which demonstrates a cooling power density over 200W/cm 2 with only ∼1°C cooling. The high cooling power density is mainly due to the high thermal conductivity and heat spreading effects. These devices have potential application in hot-spots management to reduce the chip peak temperature and realize on chip thermal management. A finite element model is developed to study and optimize these 3D devices. The simulation results showed that the optimized doping concentration to achieve the maximum cooling for these 3D silicon microrefrigerators (5e18 cm -3) is different from the conventional ID device, where S 2σ achieves the maximum at the doping of 5e19 cm -3. At its optimized doping concentration, these silicon microrefrigerators could reach a maximum cooling of 3°C. Further studies prove that this deviation is due to the non-idea factors inherent within the device, e.g. semiconductor-metal contact resistance, Joule-heating from probe contact resistance etc... Thus to optimize the real device, it is necessary to chose a full model considering all the non-ideal factors.

Original languageEnglish
Title of host publicationTwenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium, SEMI-THERM 2006
Pages232-236
Number of pages5
StatePublished - 2006
Externally publishedYes
Event22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006 - Dallas, TX, United States
Duration: 14 Mar 200616 Mar 2006

Publication series

NameAnnual IEEE Semiconductor Thermal Measurement and Management Symposium
Volume2006
ISSN (Print)1065-2221

Conference

Conference22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006
Country/TerritoryUnited States
CityDallas, TX
Period14/03/0616/03/06

Keywords

  • Doping concentration
  • Electrical conductivity
  • Hot spots
  • On-chip thermal management
  • Seebeck coefficient
  • Silicon microrefrigerators

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