TY - GEN
T1 - Optimization of doping concentration for three-dimensional bulk silicon microrefrigerators
AU - Zhang, Yan
AU - Zeng, Gehong
AU - Shakouri, Ali
AU - Wang, Peng
AU - Yang, Bao
AU - Bar-Cohen, Avram
PY - 2006
Y1 - 2006
N2 - We designed and fabricated a three-dimensional (3D) silicon microrefrigerator, which demonstrates a cooling power density over 200W/cm 2 with only ∼1°C cooling. The high cooling power density is mainly due to the high thermal conductivity and heat spreading effects. These devices have potential application in hot-spots management to reduce the chip peak temperature and realize on chip thermal management. A finite element model is developed to study and optimize these 3D devices. The simulation results showed that the optimized doping concentration to achieve the maximum cooling for these 3D silicon microrefrigerators (5e18 cm -3) is different from the conventional ID device, where S 2σ achieves the maximum at the doping of 5e19 cm -3. At its optimized doping concentration, these silicon microrefrigerators could reach a maximum cooling of 3°C. Further studies prove that this deviation is due to the non-idea factors inherent within the device, e.g. semiconductor-metal contact resistance, Joule-heating from probe contact resistance etc... Thus to optimize the real device, it is necessary to chose a full model considering all the non-ideal factors.
AB - We designed and fabricated a three-dimensional (3D) silicon microrefrigerator, which demonstrates a cooling power density over 200W/cm 2 with only ∼1°C cooling. The high cooling power density is mainly due to the high thermal conductivity and heat spreading effects. These devices have potential application in hot-spots management to reduce the chip peak temperature and realize on chip thermal management. A finite element model is developed to study and optimize these 3D devices. The simulation results showed that the optimized doping concentration to achieve the maximum cooling for these 3D silicon microrefrigerators (5e18 cm -3) is different from the conventional ID device, where S 2σ achieves the maximum at the doping of 5e19 cm -3. At its optimized doping concentration, these silicon microrefrigerators could reach a maximum cooling of 3°C. Further studies prove that this deviation is due to the non-idea factors inherent within the device, e.g. semiconductor-metal contact resistance, Joule-heating from probe contact resistance etc... Thus to optimize the real device, it is necessary to chose a full model considering all the non-ideal factors.
KW - Doping concentration
KW - Electrical conductivity
KW - Hot spots
KW - On-chip thermal management
KW - Seebeck coefficient
KW - Silicon microrefrigerators
UR - http://www.scopus.com/inward/record.url?scp=33750129279&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33750129279
SN - 1424401534
SN - 9781424401536
T3 - Annual IEEE Semiconductor Thermal Measurement and Management Symposium
SP - 232
EP - 236
BT - Twenty-Second Annual IEEE Semiconductor Thermal Measurement And Management Symposium, SEMI-THERM 2006
T2 - 22nd Annual IEEE Semiconductor Thermal Measurement and Management, SEMI-THERM 2006
Y2 - 14 March 2006 through 16 March 2006
ER -