On the capacitance of vacuum microelectronic devices with different field emitter shapes

Baoping Wang, Yongming Tang, Johnny K.O. Sin, Vincent M.C. Poon

Research output: Contribution to conferencePaperpeer-review

Abstract

In this paper, capacitance of diode vacuum microelectronic devices with different field emitter shapes are studied. By using finite difference method, electric field and capacitance of field emitters with five different shapes are calculated. Calculation results show that the emitter shape has a larger effect on the field enhancement than on the capacitance. When the anode diameter is decreased from 8 μm to 4 μm, the capacitance can be decreased by ten times for the sharp tip-on-post field emitter. When the distance between the cathode and the anode and the height of the field emitter are increased by 2 μm, the capacitance can be increased by about 30% for the sharp tip-on-post field emitter.

Original languageEnglish
Pages509-513
Number of pages5
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC - St.Petersburg, Russia
Duration: 7 Jul 199612 Jul 1996

Conference

ConferenceProceedings of the 1996 9th International Vacuum Microelectronics Conference, IVMC
CitySt.Petersburg, Russia
Period7/07/9612/07/96

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