TY - JOUR
T1 - On-chip hot spot cooling using silicon thermoelectric microcoolers
AU - Wang, Peng
AU - Bar-Cohen, Avram
N1 - Funding Information:
This research was supported in part by the Intel Corp. The authors would like to thank Dr. David Chau of Intel and Professor Bao Yang of the University of Maryland for helpful technical discussion and comments.
PY - 2007
Y1 - 2007
N2 - Thermal management of microprocessors has become an increasing challenge in recent years because of localized high flux hot spots which cannot be effectively removed by conventional cooling techniques. This paper describes the use of the silicon chip itself as a thermoelectric cooler to suppress the hot spot temperature. A three-dimensional analytical thermal model of the silicon chip, including localized thermoelectric cooling, thermoelectric heating, silicon Joule heating, hot spot heating, background heating, and conductive/convective cooling on the back of the silicon chip, is developed and used to predict the on-chip hot spot cooling performance. The effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of on-chip hot spots, are investigated in detail.
AB - Thermal management of microprocessors has become an increasing challenge in recent years because of localized high flux hot spots which cannot be effectively removed by conventional cooling techniques. This paper describes the use of the silicon chip itself as a thermoelectric cooler to suppress the hot spot temperature. A three-dimensional analytical thermal model of the silicon chip, including localized thermoelectric cooling, thermoelectric heating, silicon Joule heating, hot spot heating, background heating, and conductive/convective cooling on the back of the silicon chip, is developed and used to predict the on-chip hot spot cooling performance. The effects of hot spot size, hot spot heat flux, silicon chip thickness, microcooler size, doping concentration in the silicon, and parasitic Joule heating from electric contact resistance on the cooling of on-chip hot spots, are investigated in detail.
UR - http://www.scopus.com/inward/record.url?scp=34548025127&partnerID=8YFLogxK
U2 - 10.1063/1.2761839
DO - 10.1063/1.2761839
M3 - Article
AN - SCOPUS:34548025127
SN - 0021-8979
VL - 102
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 3
M1 - 034503
ER -