Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures

Baoping Wang; Johnny K.O. Sin; Jun Cai; M. C. Poon; Yongming Tang; Chen Wang; Linsu Tong

doi:10.1109/IEDM.1996.553592

Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures

Baoping Wang
, Johnny K.O. Sin
, Jun Cai
, M. C. Poon
, Yongming Tang
, Chen Wang
, Linsu Tong

Research output: Contribution to journal › Conference article › peer-review

3 Scopus citations

Abstract

In this paper, new single- and double-gate racetrack-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm² which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.

Original language	English
Pages (from-to)	313-316
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
DOIs	https://doi.org/10.1109/IEDM.1996.553592
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 IEEE International Electron Devices Meeting - San Francisco, CA, USA Duration: 8 Dec 1996 → 11 Dec 1996

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10.1109/IEDM.1996.553592

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@article{19e82443c649429ea2a99641ee8e2169,

title = "Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures",

abstract = "In this paper, new single- and double-gate racetrack-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm2 which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30\% compared to the single-gate structure.",

author = "Baoping Wang and Sin, \{Johnny K.O.\} and Jun Cai and Poon, \{M. C.\} and Yongming Tang and Chen Wang and Linsu Tong",

note = "Publisher Copyright: O 1996 IEEE; Proceedings of the 1996 IEEE International Electron Devices Meeting ; Conference date: 08-12-1996 Through 11-12-1996",

year = "1996",

doi = "10.1109/IEDM.1996.553592",

language = "English",

pages = "313--316",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures

AU - Wang, Baoping

AU - Sin, Johnny K.O.

AU - Cai, Jun

AU - Poon, M. C.

AU - Tang, Yongming

AU - Wang, Chen

AU - Tong, Linsu

N1 - Publisher Copyright: O 1996 IEEE

PY - 1996

Y1 - 1996

N2 - In this paper, new single- and double-gate racetrack-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm2 which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.

AB - In this paper, new single- and double-gate racetrack-shaped field emitter structures are reported for the first time. The race-track-shaped edge emission is used to provide good uniformity and large field emission current density, and the double-gate control is used to provide small turn-on voltage. Experimental results show that the turn-on voltage of the single-gate structure is approximately 100 V, and the field emission current density is approximately 2.4 A/cm2 which is over 12 times larger than that of the volcano-shaped emitter structure reported previously. Furthermore, numerical simulations show that turn-on voltage of the double-gate structure is reduced by 30% compared to the single-gate structure.

UR - https://www.scopus.com/pages/publications/0030409316

U2 - 10.1109/IEDM.1996.553592

DO - 10.1109/IEDM.1996.553592

M3 - Conference article

AN - SCOPUS:0030409316

SN - 0163-1918

SP - 313

EP - 316

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

T2 - Proceedings of the 1996 IEEE International Electron Devices Meeting

Y2 - 8 December 1996 through 11 December 1996

ER -

Novel Single- and Double-Gate Race-Track-Shaped Field Emitter Structures

Abstract

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