Nanostructural study of luminescent porous polycrystalline silicon

M. C. Poon, P. G. Han, J. K.O. Sin, H. Wong

Research output: Contribution to journalConference articlepeer-review

Abstract

Luminescent porous poly-Si films with large areas or micron-sized patterns have been obtained by anodization or stain etching of phosphorus-doped poly-Si films deposited by low pressure chemical vapor deposition onto Si, thermal oxide or CVD nitride. The anodized film is composed of spherical Si grains with nano-pores formed around the surface. However, the stain-etched film has large rectangular Si grains, and no nano-pores can be observed. The intensity of photoluminescence is enhanced after nitric acid boiling or stain etching, and is found to be closely related to the crystallinity of the porous Si layers.

Original languageEnglish
Pages (from-to)265-270
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume431
DOIs
StatePublished - 1996
Externally publishedYes
EventProceedings of the 1996 MRS Spring Meeting - San Francisco, CA, USA
Duration: 8 Apr 199611 Apr 1996

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