Monotonous linearity varying stratified nanocrystalline silicon films and as p-i-n layer in thin film solar cells

Phosphorus-doped nanocrystalline silicon films (n⁺-nc-Si:H), boron-doped nanocrystalline silicon films (p⁺-nc-Si:H) and intrinsic nanocrystalline silicon films (nc-Si:H) are prepared through plasma enhanced chemical vapor deposition (PECVD), and the monotonous linearity varying stratified nanocrystalline silicon films are also prepared. The films' structure and surface topography are measured with Raman spectrum, X-ray diffraction (XRD) and ultraviolet-visible-near-infrared band spectral photometer. The results show that the crystalline composition and the grain size of the nanocrystalline silicon films are influenced by the doped chemical element (three diffraction peaks of the crystal plane (111), (220), and (311) are found through the X-ray diffraction of the film surface; the solar cell with the monotonous linearity varying stratified nanocrystalline silicon films were prepared, and the solar cell's structure is Al/ITO/n⁺-nc-Si:H/i-nc-Si:H/p-c-Si/Al/Ag. And its performances are measured, the open-circuit voltage, short-circuit current and the fill factor are improved more largely than the amorphous silicon solar cell ever before.