Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication

C. F. Cheng, M. C. Poon, C. W. Kok, Mansun Chan

Research output: Contribution to journalConference articlepeer-review

10 Scopus citations

Abstract

A model to predict Metal-Induced-Lateral-Crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.

Original languageEnglish
Pages (from-to)569-572
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2002
Externally publishedYes
Event2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States
Duration: 8 Dec 200211 Dec 2002

Fingerprint

Dive into the research topics of 'Modeling of metal-induced-lateral-crystallization mechanism for optimization of high performance thin-film-transistor fabrication'. Together they form a unique fingerprint.

Cite this