A model to predict Metal-Induced-Lateral-Crystallization (MILC) growth rate, polysilicon grain size and metal impurity distribution is proposed. The accuracy of the model has been validated by experimental results obtained from SIMS analysis. It is believed that the model gives important information for superior MILC device fabrication and development.
|Number of pages||4|
|Journal||Technical Digest - International Electron Devices Meeting|
|State||Published - 2002|
|Event||2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States|
Duration: 8 Dec 2002 → 11 Dec 2002