Modeling of low-frequency noise in barium titanate ceramic resistors

H. Wong, P. G. Han, M. C. Poon

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Low-frequency (LF) noise measurements, at room temperature and above the Curie point, were conducted in barium titanate ceramic resistors. Experiments show that the LF noise behaviors are governed by grain boundary tunneling at room temperature and by trapping and detrapping of the grain boundary states at temperatures above the Curie point and their physical models are developed, These observations provide additional information on the current conduction and the distribution of grain boundary states in these materials.

Original languageEnglish
Title of host publicationProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages49-53
Number of pages5
ISBN (Electronic)0780349326, 9780780349322
DOIs
StatePublished - 1998
Externally publishedYes
Event5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong
Duration: 29 Aug 199829 Aug 1998

Publication series

NameProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume1998-August

Conference

Conference5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Country/TerritoryHong Kong
CityHong Kong
Period29/08/9829/08/98

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