Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

C. F. Cheng; Vincent M.C. Poon; C. W. Kok; Mansun Chan

doi:10.1109/TED.2003.813521

Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

C. F. Cheng, Vincent M.C. Poon, C. W. Kok, Mansun Chan

Research output: Contribution to journal › Article › peer-review

16 Scopus citations

Abstract

The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.

Original language	English
Pages (from-to)	1467-1474
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	50
Issue number	6
DOIs	https://doi.org/10.1109/TED.2003.813521
State	Published - 1 Jun 2003
Externally published	Yes

Keywords

Crystallization
Grain growth
Polysilicon
Thin-film transistor

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10.1109/TED.2003.813521

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title = "Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization",

abstract = "The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.",

keywords = "Crystallization, Grain growth, Polysilicon, Thin-film transistor",

author = "Cheng, {C. F.} and Poon, {Vincent M.C.} and Kok, {C. W.} and Mansun Chan",

note = "Funding Information: Manuscript received July 25, 2002; revised January 7, 2003. This work was supported by the Competitive Embarked Research Grant from the Research Grant Council of Hong Kong. The review of this paper was arranged by Editor C. McAndrew.",

year = "2003",

month = jun,

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doi = "10.1109/TED.2003.813521",

language = "English",

volume = "50",

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journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

AU - Cheng, C. F.

AU - Poon, Vincent M.C.

AU - Kok, C. W.

AU - Chan, Mansun

N1 - Funding Information: Manuscript received July 25, 2002; revised January 7, 2003. This work was supported by the Competitive Embarked Research Grant from the Research Grant Council of Hong Kong. The review of this paper was arranged by Editor C. McAndrew.

PY - 2003/6/1

Y1 - 2003/6/1

N2 - The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.

AB - The growth mechanism of metal-induced-lateral-crystallization (MILC) was studied and modeled. Based on the time evolution of the metal impurity in the amorphous silicon film being crystallized, a model has been developed to predict the growth rate and the final metal distribution in the crystallized polysilicon. The model prediction has been compared with experimental results and high prediction accuracy is demonstrated. Using the model, the effects of annealing temperature, annealing time and initial metal concentration on the final grain size and metal impurity distribution can be analyzed. As a result, the model can be used to optimize the grain growth conditions for fabricating high performance thin-film-transistors on the recrystallized polysilicon film.

KW - Crystallization

KW - Grain growth

KW - Polysilicon

KW - Thin-film transistor

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ER -

Modeling of grain growth mechanism by nickel silicide reactive grain boundary effect in metal-induced-lateral-crystallization

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Keywords

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