Modeling of field dependent resistivity of BaTiO3 positive temperature coefficient resistors

H. Wong, P. G. Han, M. C. Poon, Y. Y. Chen, X. R. Zheng

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

An abnormal field dependence of resistivity is observed in BaTiO3 positive temperature coefficient resistors (PTCRs) with a small averaged grain size. With this connection, a grain boundary tunneling model for the current conduction is proposed. This new model agrees with the both the measured electric field and temperature dependencies. It suggests that grain boundary tunneling of carrier is as important as the double Schottky barrier in the current conduction in small grain size BaTiO3 PTCRs.

Original languageEnglish
Title of host publicationProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages45-48
Number of pages4
ISBN (Electronic)0780349326, 9780780349322
DOIs
StatePublished - 1998
Externally publishedYes
Event5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong
Duration: 29 Aug 199829 Aug 1998

Publication series

NameProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume1998-August

Conference

Conference5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Country/TerritoryHong Kong
CityHong Kong
Period29/08/9829/08/98

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