Mixing of phosphorus and antimony ions in silicon by recoil implantation

H. L. Kwok, Y. W. Lam, S. P. Wong, M. C. Poon

Research output: Contribution to journal › Article › peer-review

2 Scopus citations

Original language	English
Pages (from-to)	633-634
Number of pages	2
Journal	Journal of Materials Science Letters
Volume	5
Issue number	6
DOIs	https://doi.org/10.1007/BF01731532
State	Published - Jun 1986
Externally published	Yes

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title = "Mixing of phosphorus and antimony ions in silicon by recoil implantation",

author = "Kwok, {H. L.} and Lam, {Y. W.} and Wong, {S. P.} and Poon, {M. C.}",

year = "1986",

month = jun,

doi = "10.1007/BF01731532",

language = "English",

volume = "5",

pages = "633--634",

journal = "Journal of Materials Science Letters",

issn = "0261-8028",

publisher = "Chapman & Hall",

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TY - JOUR

T1 - Mixing of phosphorus and antimony ions in silicon by recoil implantation

AU - Kwok, H. L.

AU - Lam, Y. W.

AU - Wong, S. P.

AU - Poon, M. C.

PY - 1986/6

Y1 - 1986/6

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U2 - 10.1007/BF01731532

DO - 10.1007/BF01731532

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SN - 0261-8028

VL - 5

SP - 633

EP - 634

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 6

ER -