Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2

P. F. Wang; S. J. Ding; J. Y. Zhang; D. W. Zhang; J. T. Wang; W. W. Lee

doi:10.1007/s003390000562

Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C₄F₈/O₂

P. F. Wang, S. J. Ding, J. Y. Zhang, D. W. Zhang, J. T. Wang, W. W. Lee

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Amorphous SiCOF films with high carbon concentration are prepared by PECVD (plasma-enhanced CVD) with TEOS/C₄F₈/O₂. The dielectric constant of (α-SiCOF film is reduced to 2.6 and other electric properties are improved remarkably. The moisture resistibility of the film is also improved. Through FTIR and XPS analyses, the chemical construction of α-SiCOF film is investigated. The mechanism of improvements in electrical properties and stability in moisture is further discussed. It is found that the ionic polarization and orientational polarization decrease in α-SiCOF films and contribute a lot to the reduction in dielectric constant. In addition, because of the hydrophobicity of incorporated C-F bonds, the moisture resistibility of α-SiCOF film is improved.

Original language	English
Pages (from-to)	721-724
Number of pages	4
Journal	Applied Physics A: Materials Science and Processing
Volume	72
Issue number	6
DOIs	https://doi.org/10.1007/s003390000562
State	Published - 2001
Externally published	Yes

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@article{31836f8049184faa95b4c1fa120d46c7,

title = "Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2",

abstract = "Amorphous SiCOF films with high carbon concentration are prepared by PECVD (plasma-enhanced CVD) with TEOS/C4F8/O2. The dielectric constant of (α-SiCOF film is reduced to 2.6 and other electric properties are improved remarkably. The moisture resistibility of the film is also improved. Through FTIR and XPS analyses, the chemical construction of α-SiCOF film is investigated. The mechanism of improvements in electrical properties and stability in moisture is further discussed. It is found that the ionic polarization and orientational polarization decrease in α-SiCOF films and contribute a lot to the reduction in dielectric constant. In addition, because of the hydrophobicity of incorporated C-F bonds, the moisture resistibility of α-SiCOF film is improved.",

author = "Wang, {P. F.} and Ding, {S. J.} and Zhang, {J. Y.} and Zhang, {D. W.} and Wang, {J. T.} and Lee, {W. W.}",

year = "2001",

doi = "10.1007/s003390000562",

language = "English",

volume = "72",

pages = "721--724",

journal = "Applied Physics A: Materials Science and Processing",

issn = "0947-8396",

publisher = "Springer Heidelberg",

number = "6",

}

TY - JOUR

T1 - Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2

AU - Wang, P. F.

AU - Ding, S. J.

AU - Zhang, J. Y.

AU - Zhang, D. W.

AU - Wang, J. T.

AU - Lee, W. W.

PY - 2001

Y1 - 2001

N2 - Amorphous SiCOF films with high carbon concentration are prepared by PECVD (plasma-enhanced CVD) with TEOS/C4F8/O2. The dielectric constant of (α-SiCOF film is reduced to 2.6 and other electric properties are improved remarkably. The moisture resistibility of the film is also improved. Through FTIR and XPS analyses, the chemical construction of α-SiCOF film is investigated. The mechanism of improvements in electrical properties and stability in moisture is further discussed. It is found that the ionic polarization and orientational polarization decrease in α-SiCOF films and contribute a lot to the reduction in dielectric constant. In addition, because of the hydrophobicity of incorporated C-F bonds, the moisture resistibility of α-SiCOF film is improved.

AB - Amorphous SiCOF films with high carbon concentration are prepared by PECVD (plasma-enhanced CVD) with TEOS/C4F8/O2. The dielectric constant of (α-SiCOF film is reduced to 2.6 and other electric properties are improved remarkably. The moisture resistibility of the film is also improved. Through FTIR and XPS analyses, the chemical construction of α-SiCOF film is investigated. The mechanism of improvements in electrical properties and stability in moisture is further discussed. It is found that the ionic polarization and orientational polarization decrease in α-SiCOF films and contribute a lot to the reduction in dielectric constant. In addition, because of the hydrophobicity of incorporated C-F bonds, the moisture resistibility of α-SiCOF film is improved.

UR - http://www.scopus.com/inward/record.url?scp=0034969827&partnerID=8YFLogxK

U2 - 10.1007/s003390000562

DO - 10.1007/s003390000562

M3 - Article

AN - SCOPUS:0034969827

SN - 0947-8396

VL - 72

SP - 721

EP - 724

JO - Applied Physics A: Materials Science and Processing

JF - Applied Physics A: Materials Science and Processing

IS - 6

ER -

Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C4F8/O2

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Low-dielectric-constant α-SiCOF film for ULSI interconnection prepared by PECVD with TEOS/C₄F₈/O₂