Large-grain polysilicon crystallization enhancement using pulsed RTA

C. F. Cheng, T. C. Leung, M. C. Poon, Mansun Chan

Research output: Contribution to journalArticlepeer-review

6 Scopus citations


Enhanced metal-induced lateral crystallization (MILC) using a pulsed rapid thermal annealing (PRTA) technique to form a large-grain polysilicon layer has been investigated. By applying high temperature for a short period of time, MILC is enhanced while the background solid phase crystallization is suppressed. Experimental results show that the PRTA method is capable of increasing the rate of directional crystallization and improving the crystal quality of the recrystallized polysilicon layer. The overall annealing time and total thermal budget to achieve similar grain size as in constant temperature annealing is also reduced.

Original languageEnglish
Pages (from-to)553-555
Number of pages3
JournalIEEE Electron Device Letters
Issue number8
StatePublished - 1 Aug 2004
Externally publishedYes


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